MIT Engineers Grow “Perfect” Atom-Thin Materials

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MIT Engineers Grow “Perfect” Atom-Thin Materials
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Their method could enable chip manufacturers to create transistors for the next generation using materials besides silicon. Adhering to Moore's Law, the number of transistors on a microchip has doubled annually since the 1960s, but this growth is expected to reach its limit as silicon, the foundati

By depositing atoms on a wafer coated in a “mask” , MIT engineers can corral the atoms in the mask’s individual pockets , and encourage the atoms to grow into perfect, 2D, single-crystalline layers . Credit: Jeehwan Kim, Ki Seok Kim, et. al

Enter 2D materials — delicate, two-dimensional sheets of perfect crystals that are as thin as a single. At the scale of nanometers, 2D materials can conduct electrons far more efficiently than silicon. The search for next-generation transistor materials therefore has focused on 2D materials as potential successors to silicon.

“We expect our technology could enable the development of 2D semiconductor-based, high-performance, next-generation electronic devices,” says Jeehwan Kim, associate professor of mechanical engineering atKim and his colleagues detail their method in a paper recently published in.

“But nobody uses sapphire in the memory or logic industry,” Kim says. “All the infrastructure is based on silicon. For semiconductor processing, you need to use silicon wafers.” To do so, they first covered a silicon wafer in a “mask” — a coating of silicon dioxide that they patterned into tiny pockets, each designed to trap a crystal seed. Across the masked wafer, they then flowed a gas of atoms that settled into each pocket to form a 2D material — in this case, a TMD. The mask’s pockets corralled the atoms and encouraged them to assemble on the silicon wafer in the same, single-crystalline orientation.

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