An international team of researchers has found that protons that produce multiple phase transitions in ferroelectric materials could help develop high-performance memory devices.
The new approach conceived by the team is based on the protonation of indium selenide to generate a multitude of ferroelectric phases. It consisted of ferroelectric material deposited in a transistor made of a silicon-supported stacked heterostructure.
By alternating the applied voltage, the researchers then gradually injected or removed protons from the ferroelectric film. This resulted in several ferroelectric phases with various degrees of protonation, which is crucial for implementing multilevel memory devices with substantial storage capacity.
“Protonation levels also varied depending on the proximity of the film layer to silica. They reached maximum values in the bottom layer, which was in contact with silica, and decreased in stages to achieve minimum amounts in the top layer.” “We observed this unusual phenomenon because protons diffused out of the material and into the silica,” Xue explained.
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